A 2 watt, 8-14 GHz HBT power MMIC with 20 dB gain and >40% power-added efficiency

Author

Ali, Fazal ; Gupta, Aditya ; Salib, Mike ; Veasel, Bradley W. ; Dawson, Dale E.

Author_Institution

Adv. Technol. Div., Westinghouse Electr. Corp., Baltimore, MD, USA

Volume

42

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2635

Lastpage

2641

Abstract

A two-stage, 8-14 GHz high-efficiency AlGaAs/GaAs HBT MMIC power amplifier has been designed and tested. At 7 V collector bias, this common-emitter monolithic amplifier has achieved 20 dB gain, 33 dBm (CW) output power, and >40% power-added efficiency over the 8-14 GHz band. The amplifier is designed for 25 Ω input and output impedance, and all the matching networks, as well as biasing circuits, are contained within this HBT MMIC. To our knowledge, this is the highest efficiency, the highest gain, and the highest output power reported for any monolithic power amplifier covering a 6 GHz bandwidth in the X-Ku band

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; impedance matching; integrated circuit design; microwave power amplifiers; 2 W; 20 dB; 40 percent; 6 GHz; 8 to 14 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT MMIC power amplifier; CW output power; Ku-band; X-band; amplifier design; biasing circuits; common-emitter monolithic amplifier; high-efficiency; impedance matching networks; power-added efficiency; two-stage amplifier; Bandwidth; Circuit testing; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance; MMICs; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.339808

Filename

339808