Title :
Distribution function relaxation times in gallium arsenide
Author_Institution :
University of Reading, Department of Computer Science, Reading, UK
fDate :
4/1/1977 12:00:00 AM
Abstract :
A complete description of the important relaxation processes in gallium arsenide is presented. Included for the first time are the individual valley properties, combined with the electric field dependence of all relaxation times.
Keywords :
III-V semiconductors; carrier relaxation time; gallium arsenide; GaAs; distribution function relaxation times; electric field dependence; valley properties;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1977.0011
