Title :
Computer simulation of negative-resistance oscillators using a Monte-Carlo model of gallium arsenide
Author :
Warriner, Robert A.
Author_Institution :
University of Reading, Department of Computer Science, Reading, UK
fDate :
7/1/1977 12:00:00 AM
Abstract :
A gallium arsenide diode structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space, and three dimensions in k-space, with a full description of the material scattering cross-section, which is implemented using Monte-Carlo techniques. Detailed information about electric field and valley population profiles is presented for both dipole domain, and l.s.a. modes of operation. Comparison is made with the widely differing previous theoretical results.
Keywords :
Monte Carlo methods; digital simulation; electronic engineering computing; limited space charge accumulation; microwave oscillators; negative resistance; semiconductor device models; semiconductor diodes; solid-state microwave devices; GaAs; LSA modes; Monte Carlo model; computer simulation; diode; dipole domain; negative resistance oscillators; particle mesh computer model; valley population profiles;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed:19770012
