DocumentCode :
1212973
Title :
Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods
Author :
Warriner, Robert A.
Author_Institution :
University of Reading, Department of Computer Science, Reading, UK
Volume :
1
Issue :
4
fYear :
1977
fDate :
7/1/1977 12:00:00 AM
Firstpage :
105
Lastpage :
110
Abstract :
A gallium arsenide planar field-effect transistor (f.e.t.) structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space and three dimensions in k-space; with a full description of the material scattering cross-section which is implemented using Monte-Carlo techniques. The f.e.t. static characteristic has been calculated together with the lumped equivalent-circuit paramters. A comparison is made between devices with and without substrate. Detailed information about electrostatic potential and valley population profiles is presented for the first time. Cole-Cole plots of complex output impedance are used in determining device frequency response.
Keywords :
Monte Carlo methods; Schottky gate field effect transistors; digital simulation; electronic engineering computing; equivalent circuits; semiconductor device models; Cole Cole plots; GaAs FET; MESFET; Monte Carlo methods; complex output impedance; electrostatic potential; field effect transistors; frequency response; lumped equivalent circuit parameters; particle mesh computer model; static characteristic; valley population profiles;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed.1977.0013
Filename :
4807526
Link To Document :
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