Title :
High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD
Author :
Ito, H. ; Yamahata, S. ; Shigekawa, N. ; Kurishima, K. ; Matsuoka, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
11/23/1995 12:00:00 AM
Abstract :
State of the art fT and fmax values of 135 and 113 GHz for MOCVD grown C-doped base InP/InGaAs HBTs are achieved with a 0.5×4.7 μm2 emitter area device. A rapid increase in fT at a very low VCE value of 0.3 V owing to the abrupt base dopant profile demonstrates the suitability of C-doped-base HBTs for high-speed and low-power circuit applications
Keywords :
III-V semiconductors; carbon; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; vapour phase epitaxial growth; 113 GHz; 135 GHz; C-doped base HBT; InP:Si-InGaAs:C; MOCVD growth; abrupt base dopant profile; heterojunction bipolar transistors; high-speed operation; low-power circuit applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951436
