Title :
Use of impatt diodes as fast avalanche photodetectors
Author :
Taylor, Daniel J. ; Plumb, R.G. ; Brook, P. ; Caroll, J.E.
Author_Institution :
Royal Signals & Radar Establishment, Baldock, UK
fDate :
9/1/1977 12:00:00 AM
Abstract :
The required device structure for a fast avalanche photodiode is very similar to that of a good impatt diode, which suggests that conventional impatt technology may be used to produce goodquality very fast photodiodes. An experiment to demonstrate this propostion is reported.
Keywords :
IMPATT diodes; photodetectors; photodiodes; IMPATT diodes; fast avalanche photodetectors; p+-n-n+ structure; photodiode;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1977.0024
