Title :
High transconductance AlGaN/GaN optoelectronic heterostructure field effect transistor
Author :
Khan, M.Asif ; Shur, M.S. ; Chen, Q.
Author_Institution :
APA Opt. Inc., Blaine, MN, USA
fDate :
11/23/1995 12:00:00 AM
Abstract :
The authors report on 1 μm gate Al0.15Ga0.85 N/GaN heterostructure field effect transistors, which demonstrate a high transconductance (up to 64 mS/mm) under illumination. The increase in the transconductance and in device current under light is explained by the creation of trapped positive charge and conduction electrons in the channel, which enhances the surface density of the two-dimensional electron gas in the device channel up to 2×1012cm-3 and decreases the source series resistance
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; phototransistors; two-dimensional electron gas; 1 micron; 2DEG; 64 mS/mm; Al0.15Ga0.85N-GaN; conduction electrons; heterostructure FET; heterostructure field effect transistor; high transconductance; optoelectronic HFET; source series resistance reduction; surface density; trapped positive charge; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951408
