• DocumentCode
    1213153
  • Title

    Computer-aided design of multilayer-structure Ga1-xAIxAS-GaAs Solar cells

  • Author

    Usami, Akira ; Hamamoto, Yoshihiko

  • Author_Institution
    Nagoya Institute of Technology, Department of Electronics, Nagoya, Japan
  • Volume
    1
  • Issue
    6
  • fYear
    1977
  • fDate
    11/1/1977 12:00:00 AM
  • Firstpage
    182
  • Lastpage
    184
  • Abstract
    The spectral response, the voltage and current that give maximum power, and the conversion efficiency have all been calculated for Ga1-xAlxAs/p-GaAs/n-GaAs solar cells that have multilayer GaAlAs windows on their surfaces. In the numerical analysis, photo-generated carrier collection in the window layers was considered. The spectral response in the short-wavelength region could be improved if either the Al composition factor x of the window layer was made larger or the window was made thinner. The lifetime of the carriers in the p-GaAs layer is especially important for improving the spectral response and the conversion efficiency. The increases of donor concentration in the n-GaAs bulk region and of acceptor concentration in the p-GaAs layer cause the current and voltage to increase. Thus the multilayer structures can make efficient use of the short-wavelength region of the spectrum and be easier to produce than a continuously graded structure. Conversion efficiencies can be approximately 20% in AMO.
  • Keywords
    CAD; solar cells; Ga1-xAlxAs-GaAs solar cells; acceptor concentration; carrier lifetime; conversion efficiency; donor concentration; multilayer GaAlAs windows; multilayer structures; photogenerated carrier collection; spectral response;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1977.0028
  • Filename
    4807543