DocumentCode
1213153
Title
Computer-aided design of multilayer-structure Ga1-xAIxAS-GaAs Solar cells
Author
Usami, Akira ; Hamamoto, Yoshihiko
Author_Institution
Nagoya Institute of Technology, Department of Electronics, Nagoya, Japan
Volume
1
Issue
6
fYear
1977
fDate
11/1/1977 12:00:00 AM
Firstpage
182
Lastpage
184
Abstract
The spectral response, the voltage and current that give maximum power, and the conversion efficiency have all been calculated for Ga1-xAlxAs/p-GaAs/n-GaAs solar cells that have multilayer GaAlAs windows on their surfaces. In the numerical analysis, photo-generated carrier collection in the window layers was considered. The spectral response in the short-wavelength region could be improved if either the Al composition factor x of the window layer was made larger or the window was made thinner. The lifetime of the carriers in the p-GaAs layer is especially important for improving the spectral response and the conversion efficiency. The increases of donor concentration in the n-GaAs bulk region and of acceptor concentration in the p-GaAs layer cause the current and voltage to increase. Thus the multilayer structures can make efficient use of the short-wavelength region of the spectrum and be easier to produce than a continuously graded structure. Conversion efficiencies can be approximately 20% in AMO.
Keywords
CAD; solar cells; Ga1-xAlxAs-GaAs solar cells; acceptor concentration; carrier lifetime; conversion efficiency; donor concentration; multilayer GaAlAs windows; multilayer structures; photogenerated carrier collection; spectral response;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1977.0028
Filename
4807543
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