Title :
Application of Pt/a-Si:H gate GaAs FETs to wide noise margin direct-coupled FET logic
Author :
Galashan, A.F. ; Bland, S.W.
Author_Institution :
STC Technol. Ltd., Harlow, UK
Abstract :
The use of a Pt/a-Si:H gate on GaAs MESFET structures is shown to produce a rectifying gate with lower currents in forward bias, this being applicable to increasing noise margins in direct coupled FET logic schemes. FETs show good DC transconductance, low hysteresis in the current voltage (I/V) characteristics, and the absence of severe drift. This confirms that the approach is not hampered by slow surface states.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; hydrogen; integrated logic circuits; platinum; silicon; DC transconductance; GaAs; I-V characteristics; MESFET structures; Pt-Si:H gate; direct-coupled FET logic; forward bias; low hysteresis; rectifying gate; wide noise margin;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890898
