Title :
Trap enhanced conductivity modulation effect in P+-N-N + GaAs diodes
Author :
Manifacier, J.C. ; Ardebili, R. ; Moreau, Y. ; Michez, A. ; Bordure, G.
Author_Institution :
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
11/23/1995 12:00:00 AM
Abstract :
Through computer resolution of the transport equations, the authors show the influence of deep centres on the behaviour of P+ -N-N+ or P+-I-N+ GaAs diodes at high forward current levels. Depending on the nature (hole or electron trap) and density of these deep centres, it is possible to decrease the voltage drop at high forward current density and thus to increase the power efficiency of the devices
Keywords :
III-V semiconductors; deep levels; electron traps; gallium arsenide; hole traps; power semiconductor diodes; GaAs; P+-I-N+ diodes; P+-N-N+ diodes; computer simulation; conductivity modulation; deep centres; electron traps; forward current density; hole traps; power efficiency; transport equations; voltage drop;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951403
