DocumentCode
1213321
Title
Study of Random Telegraph Signals in Single-Walled Carbon Nanotube Field Effect Transistors
Author
Liu, Fei ; Wang, Kang L. ; Li, Chao ; Zhou, Chongwu
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California
Volume
5
Issue
5
fYear
2006
Firstpage
441
Lastpage
445
Abstract
Random telegraph signals (RTSs) are observed in the single-walled carbon nanotube (SWNT) field-effect transistors. The RTS mechanism is studied in detail. It is shown that trapping/detrapping due to the defects in the oxide is the main reason for RTSs in the carbon nanotube field-effect transistors (CNT-FETs). The amplitude of the RTSs in CNT-FETs is mainly attributed to mobility modulation. The defect causing the RTSs is a hole-type Coulomb repulsive center located near the valance band of the SWNT
Keywords
carbon nanotubes; field effect transistors; flicker noise; nanotube devices; valence bands; C; CNT-FET; flicker noise; mobility modulation; random telegraph signals; single-walled carbon nanotube field effect transistors; valance band; 1f noise; Amplitude modulation; CNTFETs; Carbon nanotubes; Circuit noise; FETs; Low-frequency noise; Nanoscale devices; Semiconductor device noise; Telegraphy; Carbon nanotube (CNT); random telegraph signal (RTS);
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2006.880906
Filename
1695939
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