DocumentCode :
1213436
Title :
Electronic and Structural Properties of Oxygen-Doped BN Nanotubes
Author :
Silva, Ld.A. ; Guerini, Silvete Coradi ; Lemos, Volia ; Filho, Josué Mendes
Author_Institution :
Inst. de Fisica, Sao Paulo Univ.
Volume :
5
Issue :
5
fYear :
2006
Firstpage :
517
Lastpage :
522
Abstract :
The structural and electronic properties of oxygen substitutional doping in a (10,0) BN nanotube were obtained using ab initio calculation based on the density functional theory. For the oxygen replacing a boron atom in the tube (OB), the structure is locally deformed. In the case of nitrogen substitution (ON), however, the tube structure remains practically the same with negligible deformation observed around the oxygen atom. The electronic band structure for OB nanotubes is modified by the appearance of three strongly localized states, two of then as gap states. In the case of ON nanotubes the Fermi level is shifted into the conduction band inducing a metallic character to the doped tube. The analysis of the formation energies shows that the ON substitution is more favorable, particularly in the case of a boron-rich environment
Keywords :
Fermi level; III-V semiconductors; ab initio calculations; band structure; boron compounds; conduction bands; density functional theory; localised states; nanotubes; semiconductor doping; wide band gap semiconductors; BN:O; Fermi level; ab initio calculation; conduction band; density functional theory; electronic band structure; electronic property; localized states; oxygen-doped nanotubes; structural property; Boron; Carbon nanotubes; Chemical technology; Density functional theory; Electron tubes; Helium; Insulation; Nanostructures; Nitrogen; Semiconductor device doping; Ab initio calculation; BN nanotube; electronic properties; structural properties;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2006.880495
Filename :
1695950
Link To Document :
بازگشت