A novel InP/InGaAs TEBT for ultralow current operations

Author

Chen, Chun-Yuan ; Cheng, Shiou-Ying ; Chiou, Wen-Hui ; Chuang, Hung-Ming ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

24

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

126

Lastpage

128

Abstract

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

Keywords

bipolar transistors; gallium arsenide; indium compounds; low-power electronics; semiconductor device breakdown; semiconductor device reliability; 2 V; 40 mV; InP-InGaAs; InP/InGaAs; TEBT; collector current; collector-emitter offset voltage; common-emitter breakdown voltage; current gain; low-power consumption circuit; operation regime; supply voltage; tunneling emitter bipolar transistor; ultralow current operations; Bipolar transistors; Charge carrier processes; Circuits; Electron emission; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Photonic band gap; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.809529

Filename

1202502