• DocumentCode
    1213524
  • Title

    Oxide wearout phenomena of ultrathin SiO2 film during high-field stress

  • Author

    Fukuda, H. ; Yasuda, M. ; Iwabuchi, T.

  • Author_Institution
    Oki Electric Ind. Co. Ltd., Tokyo, Japan
  • Volume
    28
  • Issue
    16
  • fYear
    1992
  • fDate
    7/30/1992 12:00:00 AM
  • Firstpage
    1516
  • Lastpage
    1518
  • Abstract
    The behaviour of 3.5 nm-thick thermal SiO2 films under high-field (>14 MV/cm) electrical stress is measured. During the stress, time-dependent oxide wearout, which arises via three step processes, has been observed for small-area MOS tunnel diodes. The results showed that stress-induced anomalous conduction, in which the barrier height drops to 0.7 eV, arises in the final degradation process. This finding indicates that a new current path arises via oxide trap sites spreading into the oxide, triggering the oxide breakdown.
  • Keywords
    dielectric thin films; electric breakdown of solids; electron traps; high field effects; hole traps; metal-insulator-semiconductor structures; silicon compounds; barrier height; degradation process; electrical stress; high-field stress; oxide breakdown; oxide trap sites; small-area MOS tunnel diodes; stress-induced anomalous conduction; time-dependent oxide wearout; ultrathin SiO 2 film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920963
  • Filename
    153219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1213524