Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

Author

Chang, S.J. ; Chen, C.H. ; Su, Y.K. ; Sheu, J.K. ; Lai, W.C. ; Tsai, J.M. ; Liu, C.H. ; Chen, S.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

24

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

129

Lastpage

131

Abstract

GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.

Keywords

III-V semiconductors; Schottky diodes; electrostatic discharge; etching; gallium compounds; indium compounds; light emitting diodes; optical losses; quantum well devices; 1300 V; ESD protection; InGaN-GaN; MQW LEDs; electrostatic discharge threshold; etching; forward turn-on voltage; internal Schottky diode; optical loss; redeposition techniques; reverse current; Bonding; Electrostatic discharge; Etching; Gallium nitride; Light emitting diodes; Optical losses; Protection; Quantum well devices; Schottky diodes; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.809043

Filename

1202503