Title :
Characteristics of p-Ge/N-GaAs heterojunctions grown by molecular beam epitaxy
Author :
Unlu, M.S. ; Strite, S. ; Won, T. ; Adomi, K. ; Chen, Jiann-Jong ; Mohammad, S.N. ; Biswas, D. ; Morkoc, H.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
Reports the nearly ideal electrical characteristics of p-Ge/N-GaAs heterojunction diodes grown by molecular beam epitaxy. The temperature and device size dependencies of the current-voltage characteristics have been investigated. At room temperature, unity ideality factor has been demonstrated over almost six decades of current.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; molecular beam epitaxial growth; p-n heterojunctions; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; Ge-GaAs heterojunction diodes; I/V characteristics; MBE; current-voltage characteristics; device size dependencies; heteroepitaxy; molecular beam epitaxy; nearly ideal electrical characteristics; room temperature; six decades of current; temperature dependence; unity ideality factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890908
