Title :
Fast current pulse m.o.s. deep-depletion technique for profiling thin epitaxial and ion-implanted layers
Author :
Ladbrooke, P.H. ; Huang, R.S. ; Barnard, J.A.
Author_Institution :
University of New South Wales, Department of Solid-State Electronics, Sydney, Australia
fDate :
7/1/1978 12:00:00 AM
Abstract :
An m.o.s. technique is described for making free-carrier profile measurements on thin layers using a current pulse of a few microseconds duration. The method minimises distortion of the results due to surface states and enables the profile right up to the semiconductor surface to be determined
Keywords :
carrier density; electric variables measurement; ion implantation; metal-insulator-semiconductor structures; semiconductor epitaxial layers; semiconductor technology; fast current pulse MOS deep depletion technique; free carrier profile measurement; profile up to semiconductor surface;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0041
