High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer

Author

Lee, Chia-Ming ; Chuo, Chang-Cheng ; Chen, I-Ling ; Chang, Jui-Cheng ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

Volume

24

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

156

Lastpage

158

Abstract

Unlike the conventional layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.

Keywords

III-V semiconductors; brightness; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; tunnelling; wide band gap semiconductors; 20 mA; InGaN-GaN; MQW LED; high-brightness inverted LED; multiple-quantum-well LEDs; n+/p+ tunnel junction; reversed p-type/n-type layer sequence; Educational institutions; Gallium nitride; Light emitting diodes; Magnesium; Power generation; Quantum well devices; Superlattices; Temperature; Thermal conductivity; X-ray diffraction;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.809533

Filename

1202512