Title :
AlGaInP light-emitting diode with tensile strain barrier reducing layer
Author :
Su, Juh-Yuh ; Wu, Meng-Chi ; Chen, Wen-Bin ; Su, Yan-Kun
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
3/1/2003 12:00:00 AM
Abstract :
A novel tensile strain barrier reducing (TSBR) structure is grown between the window and cladding layers of multi-quantum-well (MQW)-AlGaInP light-emitting diodes (LEDs). The TSBR film (100/spl sim/200 /spl Aring/ of Ga/sub 0.65/In/sub 0.35/P) is of lattice size and valence band energy intermediate between those of window and cladding layers, thus reducing band offset and decreasing device forward bias from 2.55 V to 1.92 V at 20 mA, with concomitant improvements in dynamic resistance and junction heating. The TSBR layer increases power efficiency by 30% at 20 mA and up to 65% at high current conditions. The reduced junction heating of the with-TSBR design may be of significant advantage to device quality, reliability and lifetime, especially for high current applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device reliability; semiconductor quantum wells; valence bands; 1.92 V; 100 to 200 A; 20 mA; AlGaInP; AlGaInP light-emitting diode; GaInP; GaInP TSBR film; MQW LED; band offset reduction; device lifetime; device quality; device reliability; dynamic resistance; high current conditions; junction heating reduction; lattice size; multi-quantum-well LED; power efficiency; tensile strain barrier reducing structure; valence band energy; Distributed Bragg reflectors; Epitaxial layers; Light emitting diodes; Optical films; Quantum well devices; Research and development; Resistance heating; Tensile strain; Vehicle dynamics; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.809527