Title :
Structural and morphological studies of cuprous oxide thin film developed via. potentiostatic electrodeposition
Author :
Das, Carl ; Balasubramaniam, K.R.
Author_Institution :
Dept. of Energy Sci. & Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
Cuprous oxide is deposited on various substrates such as stainless steel (SS), Cr-Au (20-100 nm) coated SS, fluorine doped tin oxide on glass (FTO-G), Cr-Au (20-100 nm) coated FTO-G and Ga doped ZnO (GZO) through potentiostatic electrodeposition method. A wide range of potential is used for deposition and all the results are in good agreement with Pourbaix diagram of copper. Morphological properties are optimized with respect to temperature, applied potential and pH. All the films are characterized through X-Ray diffractometry, Scanning Electron Microscope, thickness measurements through profilometer and UV-Vis-NIR analysis. Our study demonstrates to deposit a high quality cuprous oxide film through potentiostatic electrodeposition with respect to continuity and larger grains, which may enhance photovoltaic performance and also for use in photoelectrochemical conversion systems.
Keywords :
X-ray diffraction; copper compounds; electrodeposition; infrared spectra; photoelectrochemistry; photovoltaic effects; scanning electron microscopy; semiconductor thin films; thickness measurement; ultraviolet spectra; visible spectra; Cr-Au coated FTO-G substrate; Cr-Au coated SS substrate; CrAu-SnO:F-SiO2; Cu2O; GZO substrate; SnO:F-SiO2; UV-vis-NIR analysis; X-ray diffractometry; ZnO:Ga; cuprous oxide thin film; fluorine doped tin oxide-on-glass substrate; photoelectrochemical conversion systems; potentiostatic electrodeposition; profilometer; scanning electron microscope; size 20 nm to 100 nm; stainless steel; thickness measurements; Films; Photovoltaic systems; Scanning electron microscopy; Standards; X-ray scattering; cuprous oxide; photovoltaic; potentiostatic electrodeposition;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924866