DocumentCode
1213685
Title
Infrared high spatial-resolution determination of doping levels in p-n junctions
Author
White, J.C. ; Smith, J.G.
Author_Institution
University of Southampton, Department of Electronics, Southampton, UK
Volume
2
Issue
5
fYear
1978
fDate
9/1/1978 12:00:00 AM
Firstpage
164
Lastpage
166
Abstract
A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 ¿¿m is obtainable and a further advantage is that it is unaffected by high reverse currents.
Keywords
doping profiles; emissivity; p-n junctions; IR high spatial resolution; capacitance voltage techniques; depletion layer; doping levels; high reverse currents; nondestructive IR emission measurement; p-n junctions; semiconductor;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1978.0051
Filename
4807602
Link To Document