Title :
10ps optoelectronic sampling system
Author :
Low, A.J. ; Carroll, J.E.
Author_Institution :
University of Cambridge, Department of Engineering, Cambridge, UK
fDate :
11/1/1978 12:00:00 AM
Abstract :
Mode-locked laser pulses of less than 10 ps duration are used to switch electrical gates made from microstrip line on high-resistivity silicon, in 10 ps. These gates can generate steps and pulses of around 100 V with 10 ps rise and fall times. Sampling can also be accomplished with a 10 ps aperture. By combining a group of such gates, along with the generation of appropriate laser pulses and timing signals, a sampling system is formed. Simple time-domain reflectometry measurements are made to demonstrate the system and to show that practical transitions to these gates can be made for signals at least up to 35 GHz.
Keywords :
laser beam applications; optoelectronic devices; semiconductor switches; 10 picosecond fall time; 10 picosecond rise time; 35 GHz; Si; microstrip line; mode locked laser pulses; optoelectronic sampling system; time domain reflectometry measurements;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0055