DocumentCode
1213721
Title
10ps optoelectronic sampling system
Author
Low, A.J. ; Carroll, J.E.
Author_Institution
University of Cambridge, Department of Engineering, Cambridge, UK
Volume
2
Issue
6
fYear
1978
fDate
11/1/1978 12:00:00 AM
Firstpage
185
Lastpage
190
Abstract
Mode-locked laser pulses of less than 10 ps duration are used to switch electrical gates made from microstrip line on high-resistivity silicon, in 10 ps. These gates can generate steps and pulses of around 100 V with 10 ps rise and fall times. Sampling can also be accomplished with a 10 ps aperture. By combining a group of such gates, along with the generation of appropriate laser pulses and timing signals, a sampling system is formed. Simple time-domain reflectometry measurements are made to demonstrate the system and to show that practical transitions to these gates can be made for signals at least up to 35 GHz.
Keywords
laser beam applications; optoelectronic devices; semiconductor switches; 10 picosecond fall time; 10 picosecond rise time; 35 GHz; Si; microstrip line; mode locked laser pulses; optoelectronic sampling system; time domain reflectometry measurements;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1978.0055
Filename
4807607
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