DocumentCode
1213741
Title
Dark-currents characterisation in charge-coupled devices
Author
Gargini, P.A. ; Morandi, C. ; Rambelli, P.E.
Author_Institution
Consiglio Nazionale delle Ricerche, LAMEL Laboratory, Bologna, Italy
Volume
2
Issue
6
fYear
1978
fDate
11/1/1978 12:00:00 AM
Firstpage
199
Lastpage
206
Abstract
By operating a c.c.d. delay line in integration mode, that is stopping the transfer process for a relatively long integration time and then shifting the charge packets to the output, it is possible to make evident thermal generation processes known as `dark currents¿¿. The first part of the paper describes in detail the generation processes that take place in the structure during the integration time, in the case of uniform bulk and surface generation parameters. An experimental technique based on this mode of operation is then presented: it is shown that it allows the easy separation of bulk and surface components of the dark currents. This technique also allows the precise localisation of small electrically active defects, and some experimental results, supported by X-ray observations, are presented.
Keywords
charge-coupled device circuits; charge-coupled devices; delay lines; CCD; charge coupled devices; dark currents characterisation; delay line; electrically active defects; integration mode; thermal generation processes;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1978.0057
Filename
4807609
Link To Document