• DocumentCode
    1213741
  • Title

    Dark-currents characterisation in charge-coupled devices

  • Author

    Gargini, P.A. ; Morandi, C. ; Rambelli, P.E.

  • Author_Institution
    Consiglio Nazionale delle Ricerche, LAMEL Laboratory, Bologna, Italy
  • Volume
    2
  • Issue
    6
  • fYear
    1978
  • fDate
    11/1/1978 12:00:00 AM
  • Firstpage
    199
  • Lastpage
    206
  • Abstract
    By operating a c.c.d. delay line in integration mode, that is stopping the transfer process for a relatively long integration time and then shifting the charge packets to the output, it is possible to make evident thermal generation processes known as `dark currents¿¿. The first part of the paper describes in detail the generation processes that take place in the structure during the integration time, in the case of uniform bulk and surface generation parameters. An experimental technique based on this mode of operation is then presented: it is shown that it allows the easy separation of bulk and surface components of the dark currents. This technique also allows the precise localisation of small electrically active defects, and some experimental results, supported by X-ray observations, are presented.
  • Keywords
    charge-coupled device circuits; charge-coupled devices; delay lines; CCD; charge coupled devices; dark currents characterisation; delay line; electrically active defects; integration mode; thermal generation processes;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1978.0057
  • Filename
    4807609