DocumentCode :
1213741
Title :
Dark-currents characterisation in charge-coupled devices
Author :
Gargini, P.A. ; Morandi, C. ; Rambelli, P.E.
Author_Institution :
Consiglio Nazionale delle Ricerche, LAMEL Laboratory, Bologna, Italy
Volume :
2
Issue :
6
fYear :
1978
fDate :
11/1/1978 12:00:00 AM
Firstpage :
199
Lastpage :
206
Abstract :
By operating a c.c.d. delay line in integration mode, that is stopping the transfer process for a relatively long integration time and then shifting the charge packets to the output, it is possible to make evident thermal generation processes known as `dark currents¿¿. The first part of the paper describes in detail the generation processes that take place in the structure during the integration time, in the case of uniform bulk and surface generation parameters. An experimental technique based on this mode of operation is then presented: it is shown that it allows the easy separation of bulk and surface components of the dark currents. This technique also allows the precise localisation of small electrically active defects, and some experimental results, supported by X-ray observations, are presented.
Keywords :
charge-coupled device circuits; charge-coupled devices; delay lines; CCD; charge coupled devices; dark currents characterisation; delay line; electrically active defects; integration mode; thermal generation processes;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed.1978.0057
Filename :
4807609
Link To Document :
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