Title :
Interface state charge in thin-oxide m.i.s.t. devices
Author :
Nassibian, A.G. ; Calligaro, R.B. ; Simmons, J.G.
Author_Institution :
University of Western Australia, Department of Electrical & Electronic Engineering, Perth, Australia
fDate :
1/1/1979 12:00:00 AM
Abstract :
A method for determining the surface-state charge density Qssof metal-thin tunnel oxide-silicon (m.i.s.) structures is presented, using the 3-terminal m.i.s. thyristor (m.i.s.t.) devices. Values of interface state charges are obtained from I/Vcharacteristics of the device. Measurements were carried out and it was found that a Qss= 1.6 ¿¿ 10¿¿7Ccm¿¿2, equivalent to an electronic charge of 1012cm¿¿2, is of the right order for thin oxides grown at low temperatures of 800¿¿C, and is in agreement with other published results.
Keywords :
interface electron states; metal-insulator-semiconductor devices; semiconductor device models; thyristors; tunnelling; I/V characteristics; interface state charges; metal thin tunnel oxide Si structures; oxides <4 Angstrom thick; surface state charge density 1.6x10-7C cm-2; three terminal MIS thyristor;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0002
