Title :
Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes
Author :
Lee, Y.H. ; Jewell, J.L. ; Scherer, Axel ; McCall, S.L. ; Harbison, J.P. ; Florez, L.T.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at approximately 983 nm. The active Ga0.8In0.2As single quantum well is 100 AA thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ion-beam etching. The microlasers are 3-50- mu m across. The minimum threshold currents are 1.1 mA (pulsed) and 1.5 mA (CW).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; sputter etching; 1.1 mA; 1.5 mA; 100 AA; 983 nm; CW; Ga 0.8In 0.2As; chemically assisted ion-beam etching; minimum threshold currents; molecular beam epitaxy; pulsed lasing; smallest gain medium volumes; surface-emitting microlasers; vertical-cavity single-quantum-well microlaser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890921
