Transistor design and application considerations for >200-GHz SiGe HBTs

Author

Freeman, Greg ; Jagannathan, Basanth ; Jeng, Shwu-Jen ; Rieh, Jae-Sung ; Stricker, Andreas D. ; Ahlgren, David C. ; Subbanna, Seshadri

Author_Institution

IBM Microelectron. Semicond. R&D Center, Hopewell Junction, NY, USA

Volume

50

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

645

Lastpage

655

Abstract

SiGe HBT transistors achieving over 200 GHz f_T and f_MAX are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed. Processing techniques available to silicon technologies are utilized to minimize parasitic resistances and capacitances and thereby establish raw speeds exceeding III-V devices despite the higher mobility in those materials. Higher current densities and greater avalanche currents, which are required for establishing such high performance, are discussed as they relate to device self-heating and reliability and the degradation of the devices. Simple circuit results are shown, demonstrating 4.2-ps ring-oscillator delays.

Keywords

Ge-Si alloys; current density; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor device reliability; semiconductor materials; 200 GHz; SiGe; SiGe HBTs; avalanche currents; current densities; parasitic capacitances; parasitic resistances; processing techniques; reliability; self-heating; transistor design; Circuits; Current density; Degradation; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Parasitic capacitance; Raw materials; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.810467

Filename

1202581