Title :
Determination of complete carrier density and drift mobility profiles in thin semiconductor layers
Author :
Huang, R.S. ; Ladbrooke, P.H.
Author_Institution :
University of New South Wales, Department of Solid-State Electronics, Sydney, Australia
fDate :
3/1/1979 12:00:00 AM
Abstract :
A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1
Keywords :
carrier density; carrier mobility; insulated gate field effect transistors; semiconductor epitaxial layers; carrier density; drift mobility; epitaxial; ion implanted layers; long gate MOSFET; short gate FET; surface mobility/bulk mobility ratio; thin semiconductor layers;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0009
