DocumentCode
1213885
Title
Determination of complete carrier density and drift mobility profiles in thin semiconductor layers
Author
Huang, R.S. ; Ladbrooke, P.H.
Author_Institution
University of New South Wales, Department of Solid-State Electronics, Sydney, Australia
Volume
3
Issue
2
fYear
1979
fDate
3/1/1979 12:00:00 AM
Firstpage
29
Lastpage
32
Abstract
A technique is described which utilises a long-gate m.o.s.f.e.t. structure to measure carrier density and drift mobility profiles in submicrometre epitaxial and ion-implanted layers. Both profiles are recovered right up to the semiconductor surface. Application of the method to studying carrier transport processes in layers for short-gate f.e.t.s indicates that mobility degradation due to diffuse surface scattering occurs, resulting in a surface-mobility/bulk-mobility ratio varying between 0.5 and 1
Keywords
carrier density; carrier mobility; insulated gate field effect transistors; semiconductor epitaxial layers; carrier density; drift mobility; epitaxial; ion implanted layers; long gate MOSFET; short gate FET; surface mobility/bulk mobility ratio; thin semiconductor layers;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1979.0009
Filename
4807623
Link To Document