DocumentCode
1213899
Title
Improved Y-domain magnetic film memory elements
Author
Cosimini, Gregory J. ; Lo, David S. ; Zierhut, Lawrence G. ; Paul, Maynard C. ; Dean, Richard H. ; Matysik, Kenneth J.
Author_Institution
Unisys, St. Paul, MN, USA
Volume
24
Issue
3
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
2060
Lastpage
2067
Abstract
Improved versions of a Y-domain memory element are presented. These improvements include element shape, detector configuration, element material composition, and element-substrate interface considerations. It is shown that the element can be optimized for use in a solid-state random-access memory. Using a shortened element with 60 degrees head and tail angles and an offset detector produces an output signal which approaches the ideal case.
Keywords
magnetic film stores; random-access storage; NiFe; Y-domain magnetic film memory elements; detector configuration; element shape; element-substrate interface considerations; material composition; offset detector; solid-state random-access memory; Detectors; Face detection; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetization; Random access memory; Read-write memory; Solid state circuits; Stripline;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.3401
Filename
3401
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