Impact of geometrical scaling on low-frequency noise in SiGe HBTs

Author

Jin, Zhenrong ; Cressler, John D. ; Niu, Guofu ; Joseph, Alvin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

50

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

676

Lastpage

682

Abstract

The influence of geometrical scaling on low-frequency noise in SiGe HBTs is presented. Small-size transistors show a strong variation in noise across many samples, whereas the noise in larger devices is more statistically reproducible. This size-dependent variation in noise can produce challenges for accurate compact modeling. This effect is investigated using reverse-bias emitter-base stress and calculations based on the superposition of generation/recombination noise.

Keywords

1/f noise; Ge-Si alloys; flicker noise; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; G/R noise; LF noise; SiGe; compact modeling; flicker noise; generation/recombination noise; geometrical scaling; low-frequency noise; reverse-bias emitter-base stress; size-dependent variation; 1f noise; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Low-frequency noise; MOSFETs; Noise generators; Semiconductor device noise; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.810483

Filename

1202590