• DocumentCode
    1213934
  • Title

    Influence of interface states on the charge injection in m.n.o.s. memory devices

  • Author

    Popova, L.I. ; Vitanov, P.K. ; Antov, B.Z.

  • Author_Institution
    Institute of Microelectronics, Sofia, Bulgaria
  • Volume
    3
  • Issue
    3
  • fYear
    1979
  • fDate
    5/1/1979 12:00:00 AM
  • Firstpage
    61
  • Lastpage
    64
  • Abstract
    Switching characteristics and charge centroids of m.n.o.s. memory devices with different interface state densities were studied at 25¿¿C and at low temperatures. Experimental evidence, showing that interface states with high density affect the charging process in m.n.o.s. memory devices, is presented.
  • Keywords
    interface electron states; metal-insulator-semiconductor devices; semiconductor storage devices; MNOS; charge injection; interface states; memory devices; metal nitride oxide semiconductor; switching characteristics;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1979.0014
  • Filename
    4807629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1213934