DocumentCode :
1213938
Title :
Monolithic GaAs multivibrator for operation at temperatures up to 300 degrees C
Author :
Schweeger, G. ; Singh, Jitesh K. ; Fricke, Kyle ; Klingelhofer, C. ; Hartnagel, H.L.
Author_Institution :
Tech. Hochschule Darmstadt, West Germany
Volume :
25
Issue :
20
fYear :
1989
Firstpage :
1385
Lastpage :
1386
Abstract :
A technology for temperature-stable GaAs integrated circuits is described, using as an example a monolithic multivibrator. The performance of this multivibrator and the different modes of operation are presented. It is shown that conventional models for integrated circuits fail at temperatures higher than 200 degrees C and that only careful design may prevent failures due to electric overstress, which is more probable at high temperatures.
Keywords :
III-V semiconductors; gallium arsenide; monolithic integrated circuits; multivibrators; GaAs; electric overstress; failures; high temperatures; models; multivibrator;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890927
Filename :
34013
Link To Document :
بازگشت