DocumentCode
1213952
Title
Design and modeling of a micromachined high-Q tunable capacitor with large tuning range and a vertical planar spiral inductor
Author
Chen, Jinghong ; Zou, Jun ; Liu, Chang ; Schutt-Ainé, José E. ; Kang, Sung-Mo Steve
Author_Institution
Agere Syst., Holmdel, NJ, USA
Volume
50
Issue
3
fYear
2003
fDate
3/1/2003 12:00:00 AM
Firstpage
730
Lastpage
739
Abstract
In wireless communication systems, passive elements including tunable capacitors and inductors often need high quality factor (Q-factor). In this paper, we present the design and modeling of a novel high Q-factor tunable capacitor with large tuning range and a high Q-factor vertical planar spiral inductor implemented in microelectromechanical system (MEMS) technology. Different from conventional two-parallel-plate tunable capacitors, the novel tunable capacitor consists of one suspended top plate and two fixed bottom plates. One of the two fixed plates and the top plate form a variable capacitor, while the other fixed plate and the top plate are used to provide electrostatic actuation for capacitance tuning. For the fabricated prototype tunable capacitors, a maximum controllable tuning range of 69.8% has been achieved, exceeding the theoretical tuning range limit (50%) of conventional two-parallel-plate tunable capacitors. This tunable capacitor also exhibits a very low return loss of less than 0.6 dB in the frequency range from 45 MHz to 10 GHz. The high Q-factor planar coil inductor is first fabricated on a silicon substrate and then assembled to the vertical position by using a novel three-dimensional microstructure assembly technique called plastic deformation magnetic assembly (PDMA). Inductors of different dimensions are fabricated and tested. The S-parameters of the inductors before and after PDMA are measured and compared, demonstrating superior performance due to reduced substrate loss and parasitics. The new vertical planar spiral inductor also has the advantage of occupying much smaller silicon areas than the conventional planar spiral inductors.
Keywords
Q-factor; S-parameters; capacitors; inductors; integrated circuit design; integrated circuit modelling; microassembling; micromachining; micromechanical devices; radiofrequency integrated circuits; tuning; 3D microstructure assembly technique; 45 MHz to 10 GHz; MEMS technology; RFIC; S-parameters; Si; Si substrate; capacitance tuning; electrostatic actuation; fixed bottom plates; high Q-factor inductor; high-Q tunable capacitor; microelectromechanical system; micromachined inductors; micromachined tunable capacitor; monolithic inductor; passive elements; plastic deformation magnetic assembly; return loss; suspended top plate; three-dimensional microstructure; vertical planar spiral inductor; Assembly; Capacitors; Inductors; Microelectromechanical systems; Micromechanical devices; Q factor; Silicon; Spirals; Tuning; Wireless communication;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.810479
Filename
1202603
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