DocumentCode
1214019
Title
A physics based model for the RTD quantum capacitance
Author
Lake, Roger ; Yang, Junjie
Author_Institution
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Volume
50
Issue
3
fYear
2003
fDate
3/1/2003 12:00:00 AM
Firstpage
785
Lastpage
789
Abstract
A simple derivation of the form for the compact model of the quantum capacitance in a resonant tunneling diode (RTD) is presented. The quantum capacitance is shown to reduce the resistive cutoff frequency. The implementation of the model into SPICE is described. The distorting effect of the strongly nonlinear quantum capacitance on an oscillator circuit is demonstrated in a SPICE simulation. The nonlinearity becomes important for the highest frequency applications when the RTD capacitance is comparable to the capacitance in the rest of the circuit.
Keywords
SPICE; capacitance; circuit simulation; resonant tunnelling diodes; semiconductor device models; tunnel diode oscillators; InAs-AlSb; InAs/AlSb RTD; RTD quantum capacitance; SPICE; high frequency applications; nonlinearity; oscillator circuit; physics based model; resistive cutoff frequency; resonant tunneling diode; strongly nonlinear quantum capacitance; tunnel diode oscillators; Analytical models; Circuit simulation; Cutoff frequency; Oscillators; Physics; Quantum capacitance; RLC circuits; Resonant tunneling devices; SPICE; Semiconductor diodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.811390
Filename
1202621
Link To Document