DocumentCode
1214035
Title
Modeling and optimization of resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector (RCE-SAGCM-APD)
Author
El-Batawy, Yasser M. ; Deen, M. Jamal
Author_Institution
Electr. & Comput. Eng. Dept., McMaster Univ., Hamilton, Ont., Canada
Volume
50
Issue
3
fYear
2003
fDate
3/1/2003 12:00:00 AM
Firstpage
790
Lastpage
801
Abstract
In this paper, a physical model of the Resonant Cavity Enhanced-Separated Absorption Graded Charge Multiplication-Avalanche Photodetector (RCE-SAGCM-APD) is presented. First, a SPICE model for RCE-SAGCM-APD is presented showing the dependence of the transfer function of this model on the dimensions, the material parameters and the multiplication gain of the photodetector. The results obtained from this SPICE model are compared with published experimental results and good agreement is obtained. The present SPICE model can also be applied to non RCE-APD and to different versions of avalanche photodetectors by modifying its transfer function. The gain-bandwidth characteristic of RCE-APD is studied for different areas and different values of the thicknesses of both the absorption and the multiplication layers. The gain-bandwidth characteristic of RCE-SAGCM-APD is studied for the case of an inductor added in series to the load resistance and better performance is achieved in comparison to the case with no inductance. The photodetector with and without the inductor is optimized to get the best values of thicknesses of both absorption and multiplication layers and also the optimal values of the series inductance. These optimizations are done for different areas of the photodetector, different multiplication gains and also for different load resistances.
Keywords
Fabry-Perot resonators; SPICE; avalanche photodiodes; inductance; optical transfer function; optimisation; photodetectors; semiconductor device models; RCE-SAGCM-APD; SPICE model; absorption layers; avalanche photodetectors; gain-bandwidth characteristic; load resistance; material parameters; modeling; multiplication layers; optimization; photodetector multiplication gain; physical model; resonant cavity; resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector; series added inductor; series inductance; transfer function; Absorption; Bandwidth; Charge carrier processes; Inductance; Inductors; Mirrors; Photodetectors; Resonance; SPICE; Transfer functions;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.811392
Filename
1202623
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