DocumentCode
1214113
Title
Switching characteristics of phase modulators
Author
Sch¿¿nemann, Klaus ; Sporleder, Frank ; Szabo, Laszlo
Author_Institution
Technischen Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Volume
3
Issue
5
fYear
1979
fDate
9/1/1979 12:00:00 AM
Firstpage
197
Lastpage
204
Abstract
The influence of the p-i-n-diode switching transients on the performance of digital phase modulators is studied. To this end two models are introduced: a diode model which allows one to calculate the transient impedances, and a black-box model of a phase modulator which can be incorporated in network analysis programs in order to simulate system performance. Based on these models, guidlines are given for an optimum choice of various design parameters as for example the i-layer width of the p-i-n-diode, the switching-current ratio, the switching-current waveforms and the modulator bandwidth.
Keywords
modulators; phase modulation; semiconductor device models; semiconductor diodes; semiconductor switches; digital phase modulators; i-layer width; modulator bandwidth; optimisation; p-i-n diode model; p-i-n diode switching transients; switching current ratio; switching current waveforms;
fLanguage
English
Journal_Title
Microwaves, Optics and Acoustics, IEE Journal on
Publisher
iet
ISSN
0308-6976
Type
jour
DOI
10.1049/ij-moa:19790045
Filename
4807647
Link To Document