Investigation of RF-sputtered tin sulfide thin films with in situ heating for photovoltaic applications

Tin (II) Monosulfide (SnS) is of increasing interest to researchers due to its near-optimal optoelectronic properties for photovoltaic devices. In this work, we take a new approach using a Tin (IV) Disulfide target to sputter SnS thin films. Sulfur-rich SnS thin films are produced via in situ heating of the substrate. Experimentation with substrate heating has yielded two unique crystal structures, depending on constant or “pulsed” heating. Standardless Electron Dispersive Spectroscopy measurements indicate that the films are nearly 1:1 Sn:S ratio. Films with low resistivity (<;100 Ω-cm) were produced via this method. These results are promising for improving SnS-based photovoltaic device performance.