• DocumentCode
    1214174
  • Title

    Asymmetric Chevron type junctions for hybrid bubble memory devices with 16-Mbit/cm2 storage density

  • Author

    Sato, Toshihiro ; Ikeda, Tadashi ; Suzuki, Ryo

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    24
  • Issue
    3
  • fYear
    1988
  • fDate
    5/1/1988 12:00:00 AM
  • Firstpage
    2068
  • Lastpage
    2073
  • Abstract
    Junctions between Permalloy and ion-implanted tracks for high-density hybrid bubble memory devices (>or=16 Mb/cm2) using 0.5- mu m-diameter bubbles have been investigated at a 100-kHz drive field. The conventional junctions developed for 4-Mb/cm2 devices have been found not to work at all. A novel type of asymmetric chevron (AC) junction has been proposed and operated. With the large volume of AC Permalloy patterns and the shallow ion-implanted channel, AC junctions show an operating bias-field margin of more than 6%. The feasibility of junctions for hybrid devices with 16-Mb/cm2 storage density has been confirmed.
  • Keywords
    Permalloy; ion implantation; magnetic bubble memories; 0.5 micron; 16 Mbit; Permalloy; asymmetric Chevron type junctions; diameter; hybrid bubble memory devices; ion-implanted tracks; operating bias-field margin; storage density; Bismuth; Capacitive sensors; Garnet films; Hybrid junctions; Lithography; Magnetic devices; Milling; Resists; Testing; Tracking loops;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.3402
  • Filename
    3402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1214174