• DocumentCode
    1214182
  • Title

    DC characteristics of pnp AlGaAs/GaAs narrow-base heterojunction bipolar transistors

  • Author

    Liou, L.L. ; Ezis, A. ; Ikossi-Anastasiou, K. ; Evans, K.R. ; Stutz, C.E. ; Jones, R.L.

  • Author_Institution
    Universal Energy Syst. Inc., Dayton, OH, USA
  • Volume
    25
  • Issue
    20
  • fYear
    1989
  • Firstpage
    1396
  • Lastpage
    1398
  • Abstract
    AlGaAs/GaAs pnp narrow-base heterojunction bipolar transistors (HBTs) exhibiting low collector cut-in voltages (0.25-0.3 V) and operation at collector current densities of >1.5*104 A/cm2 have been fabricated. Devices with a base width of 50 AA and nominal base doping densities of 3, 6, and 9*1018 cm-3 exhibit maximum common-emitter DC current gains of 105, 21 and 5, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; 50 AA; AlGaAs-GaAs; DC characteristics; HBTs; III-V semiconductors; MBE; base doping densities; collector current densities; common-emitter DC current gains; fabrication; heterojunction bipolar transistors; low collector cut-in voltages; narrow-base; p-n-p structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890934
  • Filename
    34020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1214182