Impact of H2S annealing on SnS device performance

Author

Hartman, Katy ; Steinmann, Volker ; Jaramillo, R. ; Chakraborty, Rupak ; Park, Hyun Ho ; Leizhi Sun ; Brandt, Riley E. ; Yun Seog Lee ; Gordon, Roy G. ; Buonassisi, Tonio

Author_Institution

Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2014

fDate

8-13 June 2014

Abstract

Tin sulfide is regarded as a possible earth-abundant alternative for chalcogenide thin film photovoltaics. The material has strong absorption in the visible wavelength region and the possibility for high carrier mobility. We review recent progress for SnS solar cell efficiencies. Annealing in H₂S gas and surface passivation of SnS are thought to be two key components that increase efficiency of SnS devices. An efficiency of η = 3.88% [1] was achieved via thermal evaporation, a manufacturing-friendly deposition method.

Keywords

annealing; carrier mobility; hydrogen compounds; light absorption; passivation; semiconductor thin films; solar cells; thin film devices; H₂S; SnS solar cell efficiency; annealing; chalcogenide thin film photovoltaics; device performance; efficiency 3.88 percent; high carrier mobility; manufacturing-friendly deposition method; surface passivation; thermal evaporation; visible wavelength region; Annealing; Buffer layers; Photovoltaic cells; Photovoltaic systems; Silicon; Zinc; Earth-abundance; Tin sulfide; congruent evaporation; thin-film solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6924932

Filename

6924932