Title :
GaAs/AlGaAs double heterostructure laser monolithically integrated with passive waveguide using focused ion beam etching
Author :
Remiens, D. ; Menigaux, L. ; Ben Assayag, G. ; Gierak, J. ; Sudraud, P.
Author_Institution :
CNET, Lab. de Bagneux, France
Abstract :
The authors report the fabrication and operation of a double heterostructure (DH) laser butt-coupled to an optical waveguide. A focused ion beam (FIB) is used to fabricate a Perot-Fabry resonator in the monolithic device. Most of the devices have threshold currents between 90 and 100 mA and emit 7 mW from the passive waveguide.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; ion beam applications; optical waveguides; semiconductor junction lasers; sputter etching; 7 mW; 90 to 100 mA; DH semiconductor laser; FIB; GaAs-AlGaAs; III-V semiconductors; OEIC; Perot-Fabry resonator; butt-coupled; double heterostructure laser; fabrication; focused ion beam etching; integrated optics; integrated optoelectronics; monolithic device; optical waveguide; passive waveguide; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890937
