Title :
Dual-wavelength AlInGaAs-InP grating-outcoupled surface-emitting laser with an integrated two-dimensional photonic lattice outcoupler
Author :
Roh, S.D. ; Patterson, S.G. ; Amarasinghe, N.V. ; Masood, T. ; Castillega, J. ; McWilliams, S. ; Phan, D. ; Lee, D. ; Kirk, J.B. ; Evans, G.A.
Author_Institution :
Photodigm Inc., Richardson, TX, USA
Abstract :
Grating-outcoupled surface-emitting semiconductor lasers emitting two independent wavelengths separated by 9.5 nm from a common aperture in a monolithic crossed configuration is demonstrated. This configuration provides integrated wavelength multiplexing at ∼1300 nm from a single aperture into a single fiber, simplifying packaging and reducing cost.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; multiplexing; photonic crystals; semiconductor lasers; surface emitting lasers; 1300 nm; AlInGaAs-InP; AlInGaAs-InP laser; distributed Bragg reflector lasers; dual-wavelength laser; grating-outcoupled laser; integrated outcoupler; integrated wavelength multiplexing; monolithic crossed configuration; semiconductor lasers; single aperture; single fiber; surface-emitting Laser; two-dimensional photonic lattice; Bragg gratings; Distributed Bragg reflectors; Distributed feedback devices; Fiber lasers; Laser feedback; Laser modes; Lattices; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Distributed Bragg reflector (DBR) lasers; gratings; outcouplers; photonic lattice; semiconductor lasers; surface-emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.839023
