Experimental and theoretical study on band gap tuning of Cu2ZnSn(S1−xSex)4 absorbers for thin-film solar cells

Author

Weiwei Sun ; Xiumei Geng ; Armstrong, J.C. ; Jingbiao Cui ; Tar-Pin Chen

Author_Institution

Dept. of Phys. & Astron., Univ. of Arkansas at Little Rock, Little Rock, AR, USA

fYear

2014

fDate

8-13 June 2014

Abstract

A non-hydrazine solution followed by spin-coating has been used to produce Cu₂ZnSnS₄ (CZTS) precursor. After annealed with sulfur or selenium powders in tube furnace at 530°C, Cu₂ZnSn(S_1-x Se_x)₄ (CZTSSe) thin films were obtained. Both theoretical calculation and experimental results showed that band gap can be tuned from 1.48 to 1.04eV by replacing S with Se in CZTSSe. Solar cell devices were fabricated using nominally CZTS and CZTSe absorbers with thickness around 500 nm. The device based on CZTSSe shows better performance than the CZTS device owing to the larger grain size and better electronic transport.

Keywords

copper compounds; energy gap; solar cells; spin coating; thin film devices; tin compounds; zinc compounds; Cu₂ZnSn(S_1-xSe_x)₄; Cu₂ZnSnS₄; absorbers; band gap tuning; electron volt energy 1.48 eV to 1.04 eV; electronic transport; grain size; nonhydrazine solution; precursor; spin-coating; temperature 530 degC; thin-film solar cells; tube furnace; Annealing; Green products; Indexes; Photonic band gap; Photovoltaic cells; Substrates; Zinc; Band gap; CZTSSe; Solar cells; Solution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6924949

Filename

6924949