Silicon-carbide MESFET-based 400°C MEMS sensing and data telemetry

Author

Wang, Run ; Ko, Wen H. ; Young, Darrin J.

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Case Western Reserve Univ., Cleveland, OH, USA

Volume

5

Issue

6

fYear

2005

Firstpage

1389

Lastpage

1394

Abstract

A prototype high-temperature silicon-carbide (SiC) MESFET-based microelectromechanical systems (MEMS) sensing and date telemetry module is reported for harsh environment applications. The module employs a MEMS silicon capacitive pressure sensor performing pressure to frequency conversion and an on-board spiral loop serving as an inductor for the LC resonator and also as a telemetry antenna. The system demonstrates a high-temperature performance up to 400°C, limited by the SiC MESFET characteristics, and achieves a telemetry distance of 1m.

Keywords

Schottky gate field effect transistors; capacitive sensors; micromechanical resonators; microsensors; pressure sensors; silicon compounds; telemetry; wide band gap semiconductors; 400 C; LC resonator; MEMS sensor; MEMS silicon capacitive pressure sensor; SiC; data telemetry; frequency conversion; high-temperature performance; microelectromechanical systems sensor; on-board spiral loop; silicon-carbide MESFET; telemetry antenna; telemetry distance; Capacitive sensors; Frequency conversion; MESFETs; Microelectromechanical systems; Micromechanical devices; Prototypes; Sensor phenomena and characterization; Silicon carbide; Spirals; Telemetry; High-temperature sensing; microelectromechanical systems (MEMS) sensor; silicon–carbide (SiC) MESFET; telemetry;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2005.858927

Filename

1532282