• DocumentCode
    121455
  • Title

    Drive-level capacitance profiling of Cu(In,Ga)Se2 solar cells for different Cu/III ratios

  • Author

    Zapalac, Geordie ; Demirkan, K. ; Mackie, N.

  • Author_Institution
    MiaSole Hi-Tech, Santa Clara, CA, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Abstract
    We report on drive-level capacitance profiling (DLCP) measurements made on Cu(In,Ga)Se2 solar cells. We observe that the deep level defect density and carrier concentration are correlated, with lower deep level defect densities and lower carrier concentrations associated with higher average Cu/III measured within the first half micron of the surface using Auger electron spectroscopy (AES).
  • Keywords
    carrier density; copper compounds; deep levels; gallium compounds; indium compounds; solar cells; ternary semiconductors; AES; Auger electron spectroscopy; Cu(InGa)Se2; Cu/III ratios; DLCP; carrier concentration; deep level defect density; drive-level capacitance profiling measurements; solar cells; Capacitance measurement; Frequency measurement; Impedance measurement; Inductance measurement; Phase measurement; Temperature measurement; Voltage measurement; CIGS; carrier concentration; deep level defects; drive-level capacitance profiling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6924956
  • Filename
    6924956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=121455