Title : 
Athermal optical gain block in C-band by serial concatenations of erbium-doped antimony oxide silica glass fiber
         
        
            Author : 
Im, Young-Eun ; Ryu, Uh-Chan ; Lee, Jhang W. ; Oh, Kyunghwan ; DiGiovanni, David J. ; Wang, Baishi
         
        
            Author_Institution : 
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., South Korea
         
        
        
        
        
        
        
            Abstract : 
We report a new novel technique to suppress the temperature-dependent gain (TDG) of erbium-doped fiber amplifier in the C-band by providing a composite optical gain block, conventional erbium-doped fiber (EDF) serially concatenated with Sb-doped silica EDF. Compared with conventional EDFs, Sb-doped silica EDF showed an opposite TDG coefficient in the C-band. Detailed experimental athermalization schemes are reported for various concatenating configurations. The temperature-dependent optical gain variation was suppressed within ±0.35 dB for the temperature range of -40°C to +80°C from 1530 to 1560 nm.
         
        
            Keywords : 
antimony compounds; erbium; glass fibres; impurity absorption spectra; optical fibre amplifiers; optical fibre testing; optical glass; thermo-optical effects; -0.35 to 0.35 dB; -40 to 80 degC; 1530 to 1560 nm; C-band; Sb-doped silica EDF; SbOSiO2:Er; antimony oxide silica glass fiber; athermal optical gain block; athermalization; composite optical gain block; conventional erbium-doped fiber; erbium-doped fiber; erbium-doped fiber amplifier; serial concatenations; temperature-dependent gain coefficient; temperature-dependent gain suppression; Energy states; Erbium; Erbium-doped fiber amplifier; Glass; Optical pumping; Passive optical networks; Silicon compounds; Stimulated emission; Temperature dependence; Temperature distribution; Antimony-doped silica fiber; erbium-doped fiber (EDF); optical amplifier; temperature-dependent gain (TDG) coefficient;
         
        
        
            Journal_Title : 
Photonics Technology Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/LPT.2004.838631