DocumentCode :
1214642
Title :
CMOS magnetic field to frequency converter
Author :
Chen, Shr-Lung ; Kuo, Chien-Hung ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
3
Issue :
2
fYear :
2003
fDate :
4/1/2003 12:00:00 AM
Firstpage :
241
Lastpage :
245
Abstract :
In this paper, a CMOS magnetic field to frequency converter with high resolution is presented. It is composed of two voltage-controlled ring oscillators whose output frequency differences linearly vary with the magnetic field perpendicular to the chip surface. The prototype circuit has been fabricated in a 0.5-μm CMOS process and operated at a 5-V supply voltage. The measured sensitivity is 24 kHz/mT and the power consumption is 5.1 mW. The small equivalent resolution of at least 20 μT can be achieved. The frequency offset is 42 kHz when no magnetic field applied. Its nonlinearity within ±120 mT is smaller than 0.56%.
Keywords :
CMOS integrated circuits; convertors; magnetic field measurement; magnetic sensors; sensitivity; 0.5 micron; 20 muT; 5 V; 5.1 mW; CMOS magnetic field to frequency converter; MAGFET; high resolution; magnetic MOSFET; magnetically controlled oscillator; magnetooperational amplifier; sensitivity; voltage-controlled ring oscillators; CMOS process; Circuits; Frequency conversion; Magnetic field measurement; Magnetic fields; Power measurement; Prototypes; Ring oscillators; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2002.807485
Filename :
1202949
Link To Document :
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