Optical beam steering using InGaAsP multiple quantum wells

We report an efficient optical beam steering device based on InGaAsP multiple quantum wells. An area-selective zinc in-diffusion process is used to define highly localized p-n junctions through which electrical currents are injected into the quantum wells. The extent of the lateral spreading of the electrical carriers can be optimized by selecting the appropriate diffusion depth. Using a twin-parallel-stripe structure, an optical beam at a wavelength of 1.51 μm was steered over a 17-μm range using dc electrical currents of less than 13 mA.