Title :
Development of InGaAs solar cells for >44% efficient transfer-printed multi-junctions
Author :
Lumb, Matthew P. ; Meitl, Matthew ; Wilson, James ; Bonafede, Salvatore ; Burroughs, Scott ; Forbes, David V. ; Bailey, Christopher G. ; Hoven, Nichole M. ; Gonzalez, M. ; Hoheisel, Raymond ; Yakes, Michael K. ; Polly, Stephen J. ; Hubbard, Seth M. ; Walt
Author_Institution :
George Washington Univ., Washington, DC, USA
Abstract :
Transfer-printing is a key enabling technology for the realization of ultra-high-efficiency, mechanically stacked II-IV solar cells with low cost. In this work, we describe the development of InGaAs solar cells, designed to harvest long wavelength photons when stacked in tandem with a high efficiency InGaP/GaAs/InGaAsNSb triple junction solar cell. High performance InGaAs solar cells, grown on InP by MOCVD, were achieved through a combination of detailed modeling, material development and device characterization. The transfer printing apparatus of Semprius Inc. was used to create a four-terminal device with an uncertified conversion efficiency of 44.1% at 690 suns.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photons; printing; solar cells; InGaAs-InGaP-GaAs-InGaAsNSb; MOCVD; Semprius Inc; efficiency 44.1 percent; efficient transfer-printed multijunction; long wavelength photons harvest; mechanically stacked III-V solar cell; triple junction solar cell; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Photovoltaic cells; Printing; Sun;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924967
