Title :
A design technique for a 60 GHz-bandwidth distributed baseband amplifier IC module
Author :
Shibata, Tsugumichi ; Kimura, Shunji ; Kimura, Hideaki ; Imai, Yuhki ; Umeda, Yohtaro ; Akazawa, Yukio
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
12/1/1994 12:00:00 AM
Abstract :
A DC-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 μm InAlAs-InGaAs low-noise HEMTs with 155 GHz fT and 234 GHz fmax. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier ICs in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range
Keywords :
HEMT integrated circuits; coplanar waveguides; distributed amplifiers; field effect MIMIC; integrated circuit packaging; millimetre wave amplifiers; multichip modules; wideband amplifiers; 0 to 60 GHz; 0.15 micron; 17.5 dB; 3D electromagnetic field analyses; 4 dB; 60 GHz; 9 dB; InAlAs-InGaAs; MCM; MIMIC; MM-wave IC; amplifier IC module; cascaded amplifiers; coaxial cable signal interfaces; design technique; distributed baseband amplifier; low-noise HEMTs; metal package; multichip module; single-chip module; three-dimensional EM field analyses; Baseband; Coaxial cables; Distributed amplifiers; Electromagnetic analysis; Electromagnetic fields; Frequency; Gain; HEMTs; MODFETs; Packaging;
Journal_Title :
Solid-State Circuits, IEEE Journal of
