DocumentCode
1214800
Title
Variable-area resonant tunnelling diodes using implanted gates
Author
Goodings, C.J. ; Cleaver, J.R.A. ; Ahmed, Hameeza
Author_Institution
Cambridge Univ., UK
Volume
28
Issue
16
fYear
1992
fDate
7/30/1992 12:00:00 AM
Firstpage
1535
Lastpage
1537
Abstract
A new fabrication technique is reported for variable-area resonant tunneling diodes in which control is achieved by means of a reverse-biased, implanted p-n junction surrounding the device. The characteristics of such devices are shown and interpreted.
Keywords
ion implantation; resonant tunnelling devices; tunnel diodes; RTD; fabrication technique; implanted gates; implanted p-n junction; resonant tunnelling diodes; reverse-biased junction; variable-area;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920975
Filename
153231
Link To Document